Study on Output Characteristics of 20 kV/100 ns Nonlinear GaAs Photoconductive Semiconductor Switch

نویسندگان

چکیده

In this paper, the output electric pulse characteristics of gallium arsenide photoconductive semiconductor switch (GaAs PCSS) with bias voltage 20 kV and width about 100 ns are studied. By designing reflection transmission optical paths, absorption rate trigger GaAs PCSS at a wavelength 1064 nm was measured to be 24.8%. When is 16 kV-20 kV, avalanche multiplication rates carriers calculated respectively. The relationship between current waveform residual charge in energy storage capacitor analyzed when kV. And trend field intensity change time. This research will helpful for application design under nonlinear mode special requirements, has important significance frontier science.

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ژورنال

عنوان ژورنال: IEEE Access

سال: 2023

ISSN: ['2169-3536']

DOI: https://doi.org/10.1109/access.2023.3239689